Paralleling SiC Schottky Diodes - YouTube
Figure 1 from Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures | Semantic Scholar
Simulation of a High-Voltage Silicon Carbide (SiC) Power Diode under High-Action Pulsed Operation
a) Schematic illustration of the 4H-SiC p-i-n diode: d = 5 µm; all... | Download Scientific Diagram
Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors: Journal of Applied Physics: Vol 118, No 8
Development of 6kV-class SiC-PiN diodes for high-voltage power inverter | Semantic Scholar
Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics Maker
Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length | Semantic Scholar
Schematic cross section of a 4H-SiC PiN diode with double JTE structure... | Download Scientific Diagram
SiC-on-SiC Epi Wafer with a Wide Band Gap for Pin Diodes
Figure 1 from Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system | Semantic Scholar
Performance degradation and defect characterization of Ni/4H-SiC Schottky diode neutron detector in high fluence rate neutron irradiation - ScienceDirect
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
An accurate electro-thermal model for merged SiC PiN Schottky diodes - ScienceDirect
4.4.2.1 PiN Diode Structure
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability | SpringerLink
Schematic cross-section view of a 4H-SiC PiN diode with the... | Download Scientific Diagram
What are SiC Schottky barrier diodes? - Advantages of using SiC-SBDs
Forward I–V characteristics of 4H-SiC PiN diodes after each RTA at... | Download Scientific Diagram
Design and Optimization of Silicon Carbide Schottky Diode - Technical Articles
Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-Parallel Diode Applications
